SLICING OF SINGLE-CRYSTAL FILMS USING ION IMPLANTATION

摘要

A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantation depth below a top surface of the crysta l structure, and chemically etching the damage layer to effect detachment of t he single-crystal film from the crystal structure. The thin film may be detache d by subjecting the crystal structure with the ion implanted damage layer to a rapid temperature increase without chemical etching. The method of the prese nt invention is especially useful for detaching single-crystal metal oxide film s from metal oxide crystal structures. Methods for enhancing the crystal slici ng etch-rate are also disclosed.