| 摘要 |
<p>The present invention relates to an electrically tunable device (10), particularly for microwaves. It comprises a carrier substrate (1), conducting means (3A, 3B) and at least one tunable ferroelectric layer (2). Between the conducting means (3A, 3B) and the tunable ferroelectric layer (2) a buffer layer (4) consisting of a thin film structure comprising a non-ferroelectric material is arranged.</p> |
