| 摘要 |
PROBLEM TO BE SOLVED: To obtain a transistor having high yield voltage, low on-resistance and fast switching speed by forming a body region in a stripe form, connecting both side end sections of a stripe to frame regions and preventing field concentration at the edge and corner of the body region. SOLUTION: A drift layer 420 is formed onto a first conductivity type drain region 410. A second conductivity type body regions 431 doped in low concentration are formed under the surface of the drift layer 420, and the adjacent body regions 431 are separated by a regular interval (a). The silicon body regions 431 are composed of stripe forms, and both-side end sections of stripes are connected to frame regions. Thus, field concentration at the edges and corners of the body regions 431 can be prevented, and ideal yield voltage can be obtained. The separation distance (a) of the body regions 431 is formed in short size, and the area of a gate electrode is reduced and capacitance between the gate electrode and a drain electrode can be decreased.
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