METHOD AND APPARATUS FOR GENERATING AND CONFINING A REACTIVE GAS FOR ETCHING SUBSTRATES

摘要

A method for performing localized etching reactions on a substrate by confining a reactive gas with a non-reactive gas curtain is described. In the method, a reactive gas capable of etching the etchable substrate is generated. The reactive gas is applied to the etchable substrate. A non-reactive gas is flowed towards the substrate in the form of a non-reactive gas curtain around the reactive gas so as to substantially confine the reactive gas to a predetermined etching region on the substrate. An apparatus for carrying out the above described method is also disclosed.