发明名称 |
Method for producing a group III nitride compound semiconductor substrate |
摘要 |
<p>The present invention provides a method for producing a group III nitride compound semiconductor substrate including: (a) forming a first semiconductor film over a substrate, the first semiconductor film made of a first group III nitride compound semiconductor and provided with a step; (b) forming a second semiconductor film made of a second group III nitride compound semiconductor having a different thermal expansion coefficient from that of the first group III nitride compound semiconductor on the first semiconductor film; and (c) cooling the substrate and separating the second semiconductor film from the first semiconductor film. Thus, a large-area group III nitride compound semiconductor substrate can be produced in high yields and with high reproducibility. <IMAGE></p> |
申请公布号 |
EP1045431(A1) |
申请公布日期 |
2000.10.18 |
申请号 |
EP20000107908 |
申请日期 |
2000.04.13 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
YURI, MASAAKI;IMAFUJI, OSAMU;NAKAMURA, SHINJI;ISHIDA, MASAHIRO;ORITA, KENJI |
分类号 |
H01L21/20;H01L21/205;H01L31/18;H01L33/00;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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