SEMICONDUCTOR LASER DEVICE

摘要

A semiconductor laser device in which a ridge structure including a layer comprised of an Al-containing compound semiconductor is formed at an upper portion, with both side portions of the layer being oxidized, and the laser-beam emitting face of the ridge structure is a non-oxidized area. As this reduces the ratio of defective cleaved faces, the production cost of the semiconductor laser device becomes lower, and because of the lower threshold current, the degradation of the characteristics over a long operational period does not likely occur. <IMAGE>