Infrared sensor and method of manufacturing the same

摘要

A SiO2 layer (25) is formed on a heat sink section (22) having a cavity (23) by thermal oxidation and an aluminum oxide layer (26) is formed on the SiO2 layer (25) by an electron beam evaporation process at a substrate temperature of 60 DEG C or less and at a deposition rate of 0.8 nm/s or less. The resulting aluminum oxide film is amorphous and has partial oxygen defects. The SiO2 layer (25) and the aluminum oxide layer (26) constitute a heat insulating thin-film (24). A thermoelectric conversion element (27) and an infrared-absorbing layer (29) are formed on the heat insulating thin-film (24) to form an infrared sensor (21). The infrared sensor (21) can be produced at low production costs and has high sensitivity. <IMAGE>