发明名称 Apparatus and method for sputtering ionized material in a plasma
摘要 An external inductive coil is used in a plasma process system having a dielectric shield which separates the coil from the plasma. The shield includes channels provided along the inner side of the shield facing the plasma region. The channels inhibit the formation of a continuous metal film over the inner surface of the shield during sputtering and deposition. The sidewalls defining the channels permit RF transmission after the surfaces directly facing the plasma are coated with metal.
申请公布号 US6132566(A) 申请公布日期 2000.10.17
申请号 US19980126357 申请日期 1998.07.30
申请人 APPLIED MATERIALS, INC. 发明人 HOFMANN, RALF;FORSTER, JOHN C.
分类号 C23C14/35;C23C14/56;H01J37/32;(IPC1-7):C23C14/34 主分类号 C23C14/35
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