| 摘要 |
The semiconductor memory device according to the present invention includes N (N is a positive even number) units of independently operating memory banks arranged in a line in a first direction, I/O bus lines which are connected respectively to the bit lines of the N memory banks and extend in the first direction, and a data amplifier circuit which amplifies and outputs data on the I/O bus lines. The data amplifier circuit is arranged between the N/2-th memory bank and the (N/2+1)-th memory bank, and the I/O bus lines are divided into first I/O bus lines and second I/O bus lines which are connected respectively to the data amplifier circuit.
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