| 摘要 |
A method of manufacturing a semiconductor device copes with miniaturization owing to reduction in an overlapping margin. According to this manufacturing method, a conductive layer forming an upper interconnection layer is formed in an opening provided for connection to a lower interconnection layer, and then an organic polymer film filling a concavity at the conductive layer located in the opening is formed. After forming a resist pattern on the organic polymer film, organic polymer film and conductive layer are etched. The overlapping margin is reduced owing to the fact the organic polymer film fills the concavity at the conductive layer.
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