发明名称 Vapor-phase film growth apparatus and gas ejection head
摘要 A vapor-phase film growth apparatus includes a substrate holder for holding a substrate, a gas ejection head, and a radiant heat shield device. The substrate holder has a substrate heater therein, and the gas ejection head has a gas injection surface for ejecting a material gas toward a substrate held by the substrate holder. The radiant heat shield device is disposed between the substrate holder and the gas injection head in confronting relationship to the gas injection surface of the gas ejection nozzle. The substantially planar radiant heat shield device is permeable to gases and has a heating capability.
申请公布号 US6132512(A) 申请公布日期 2000.10.17
申请号 US19980003948 申请日期 1998.01.08
申请人 EBARA CORPORATION 发明人 HORIE, KUNIAKI;NAKADA, TSUTOMU;MURAKAMI, TAKESHI;SUZUKI, HIDENAO;ABE, MASAHITO;ARAKI, YUJI
分类号 C23C16/44;C23C16/455;C30B25/14;(IPC1-7):C23C16/00 主分类号 C23C16/44
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