发明名称 Method of making a surface acoustic wave device
摘要 A method of producing a SAW (Surface Acoustic Wave) device, including the steps of implanting ions in an entire surface of a piezoelectric member of the SAW device, so that an ion implantation layer is formed therein; performing a heat treatment of the piezoelectric member, so that a heat-treated ion implantation layer is formed in the entire surface of the piezoelectric member; and providing an electrode of a comb type resonator on the heat-treated ion implantation layer.
申请公布号 US6131257(A) 申请公布日期 2000.10.17
申请号 US19980004273 申请日期 1998.01.08
申请人 FUJITSU LIMITED 发明人 NISHIHARA, TOKIHIRO;MATSUDA, TAKASHI;UCHISHIBA, HIDEMA;IKATA, OSAMU;SATOH, YOSHIO;KOMENOU, KAZUNARI
分类号 H03H3/08;H03H9/02;H03H9/05;H03H9/10;H03H9/25;H03H9/64;(IPC1-7):H01L41/22 主分类号 H03H3/08
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