发明名称 |
Method of making a surface acoustic wave device |
摘要 |
A method of producing a SAW (Surface Acoustic Wave) device, including the steps of implanting ions in an entire surface of a piezoelectric member of the SAW device, so that an ion implantation layer is formed therein; performing a heat treatment of the piezoelectric member, so that a heat-treated ion implantation layer is formed in the entire surface of the piezoelectric member; and providing an electrode of a comb type resonator on the heat-treated ion implantation layer.
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申请公布号 |
US6131257(A) |
申请公布日期 |
2000.10.17 |
申请号 |
US19980004273 |
申请日期 |
1998.01.08 |
申请人 |
FUJITSU LIMITED |
发明人 |
NISHIHARA, TOKIHIRO;MATSUDA, TAKASHI;UCHISHIBA, HIDEMA;IKATA, OSAMU;SATOH, YOSHIO;KOMENOU, KAZUNARI |
分类号 |
H03H3/08;H03H9/02;H03H9/05;H03H9/10;H03H9/25;H03H9/64;(IPC1-7):H01L41/22 |
主分类号 |
H03H3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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