| 摘要 |
PURPOSE: A method for fabricating a semiconductor memory device is provided to improve a degree of integration by alternatively using a p-well instead of a field oxide layer as an isolation layer between adjacent memory cells. CONSTITUTION: After a p-well(2) is formed on a substrate(1), a field oxide layer is lengthwise formed on the p-well(2) to define a lengthwise active region therebetween. Next, a plurality of word lines(5) for gates are formed across both the active region and the field oxide layer. Then, source/drain regions(6) are formed by a selective ion implantation to the exposed active region between the word lines(5). Next, plugs are formed on the source/drain regions(6). By this method, the active region is lengthwise formed without disconnection, and the p-well(2) itself is alternatively used instead of the field oxide layer as an isolation layer between adjacent memory cells. Therefore, a degree of integration is improved.
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