| 摘要 |
PURPOSE: A method for manufacturing a thin film transistor is provided to improve the characteristics of devices by forming a gate inclined to adjust the off current. CONSTITUTION: An oxide film(2) and a polysilicon(3) are deposited on a substrate(1) in turns, ions are injected thereon, and a heat treatment is performed thereon. A gate oxide film(4) and a gate polysilicon(20) are deposited on thereon. A photoresist film is formed on the region in which a gate is formed, and etched to be incline, so that the gate oxide film(4) except the region of the photoresist film is removed. At the same time, the gate polysilicon(20) is etched to be inclined, so that a gate is formed. A gate oxide film(22) is formed on the surface exposed by removing the photoresist film, a photoresist film is formed on the left surface of the gate, and the ions of n-type low density is injected into the surface, so that a n-drain(24) is formed on the right polysilicon(3) of the gate. The photoresist film is removed, a photoresist film is formed from the center of the gate to the left region of the n-drain(24), and the ions of n-type high density is injected into the surface, so that a source/drain(26) is formed on the both side of polysilicon(3). After the photoresist film is removed and a photoresist film(27) is formed on the surface except the both side of the gate oxide film(22), the gate oxide film(22) and the source/drain(26) except the region of the photoresist film(27) are removed by etching.
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