| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve stability and yield and to reduce a spacing between nodes in terms of a design rule, without using a hemispherical silicon grain(HSG) process. CONSTITUTION: A first insulating layer and a second insulating layer are formed in a semiconductor substrate(116). And, a first contact hole is formed in the first insulating layer and second insulating layer. In the contact hole is formed a plug(119) of a doped first polycrystalline silicon layer. Then, a second polycrystalline silicon layer is form on the substrate. A trench having a plurality of dints in the second polycrystalline silicon layer. Lastly, the second polycrystalline silicon layer is selectively eliminated to form a node capacitor including the trench while a plurality of dints are formed on an outer surface of the node capacitor.
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