| 摘要 |
PURPOSE: A method for activating an impurity in a source-drain region by a laser annealing in a polycrystalline transistor is provided to improve reliability, by maximizing an activation if the source-drain region, and by minimizing a damage to a gate electrode. CONSTITUTION: A method for activating an impurity in a source-drain region by a laser annealing in a polycrystalline transistor comprises the steps of: forming a polycrystalline semiconductor layer(133) of an island type on a substrate(101); consecutively evaporating an insulating material and a conductive material in the center of the polycrystalline semiconductor layer while simultaneously patterning, to form a gate insulating layer(117) and a gate electrode(111); irradiating an impurity ion to the entire surface of the substrate to inject an impurity into the polycrystalline semiconductor layer exposed to the outside of both sides of the gate electrode, and defining source and drain regions(135a,135b); forming an annealing control layer(113) in the gate electrode region and the source-drain regions on the substrate; and irradiating a laser beam through the annealing control layer.
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