EPITAXIAL STRUCTURE AND METHOD FOR FORMING LOW OHMIC CONTACT RESISTANCE OF P-TYPE GALLIUM-NITRIDE SEMICONDUCTOR

摘要

PURPOSE: An epitaxial structure for forming a low ohmic contact resistance of a P-type GaN semiconductor is provided to improve capacity of an optical device and an electronic device using the GaN semiconductor, by lowering a potential barrier generated in the P-type GaN to greatly reduce an ohmic resistance. CONSTITUTION: In an epitaxial structure for forming a low ohmic contact resistance of a P-type GaN(1) semiconductor, GaAs highly doped with a P-type impurity is grown between an ohmic metal(2) and the P-type GaN to lower a potential barrier generated in the P-type GaN when an ohmic contact is formed on the P-type GaN.