VBB DETECTOR OF MEMORY DEVICE

摘要

PURPOSE: A VBB detector of a memory device is provided to correct the deviation of a threshold voltage of a cell generated during the fabrication process. CONSTITUTION: A VBB detector of a memory device can increase or decrease the VBB level by assembling a serial arrangement and a parallel arrangement of pull-down transistors in order to control the resistance value of the pull-down transistor by selective usage of the pull-down transistor of a bias voltage sensing part(10) of the VBB detector of the memory device and by installing a fuse in order to select each pull-down transistor. The VBB detector comprises: a number of pull-down transistors where the bias voltage sensing part is operated by a VBB voltage and a power voltage is connected to a drain via a serial resistor; a first resistor control part(110) having a number of pull-down transistors; a second resistor control part(120) having parallel-connected pull-down transistors; an operation control part controlling by a VBB level during turn-on of the pull-down transistor of the second resistor control part and controlling by a VCC level during turn-off; fuse boxes(140,145) outputting an operation voltage level to the operation control part according to the cutting state of a fuse; and a third resistor control part(150) comprising fuses which controls a current path, being connected with each pull-down transistor in serial.