A THIN FILM TRANSISTOR FERROELECTRIC RANDOM ACCESS MEMORY WITH A COMMON WORD LINE AND AN OPERATING METHOD THEREOF

摘要

PURPOSE: A thin film transistor ferroelectric random access memory is provided to make each memory cell by using one TFT and one ferroelectric capacitor, and makes a common word line used as a reference of an addressing by interconnecting a gate and source of TFT with a common word line. CONSTITUTION: A lower electrode of a ferroelectric capacitor is formed in one-direction strip-shape in order to form a plate line(106). A channel(103) of the TFT is functioned as an upper electrode of the ferroelectric capacitor(105) corresponding to each memory cell. A gate and a source of the TFT are interconnected to form a strip-shape common word line crossed with the plate line. a bit line(101) is arranged parallel with plate line(106) by connecting a drain of the TFT.