CAPACITOR FORMING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming the capacitor of a semiconductor device is provided to perform easily the reactive ion etch(RIE), improve a step coverage and keep stably a dielectric layer and a boundary surface by forming a titanium nitride(TiN) film by using metal organism as a precursor. CONSTITUTION: A contact hole on the interlayer insulating film(8) of a semiconductor substrate(20) is filled up to form a contact plug. A Ti film is formed on the semiconductor substrate(20). A metal organic chemical vapor deposited - titanium nitride(MOCVD-TiN), which is plasma-processed or not, is deposited as a lower electrode on the Ti film. The pattern of the lower electrode is formed by etching selectively the MOCVD-TiN and the Ti film. A dielectric film(5) is formed on the pattern of the lower electrode. An upper electrode having a depositing structure of the MOCVD-TiN which is plasma-processed or not is formed on the dielectric film(5) in reverse order for forming the lower electrode.