MAGNETIC EFFECT HETEROJUNCTION BIPOLAR TRANSISTOR

摘要

PURPOSE: A magnetic field effect dual-junction bipolar transistor device is provided to improve the high speed operation characteristic of the device by giving force through the magnetic field effect in the proper direction shifting to the collector thin film from the emitter thin film through the base thin film. CONSTITUTION: A magnetic field layer(202) is formed to shift electrons to outer terminal, a sub-collector layer(204) is formed on a part of the magnetic field layer selected, a metal resistant collector electrode(211) is for connecting the sub-collector and the magnetic field layer electrically, a collector layer(205) is formed on the selected part of the sub-collector layer, a base layer thin film(206) is formed on the selected part of the collector layer, a metal resistant base electrode(210) is electrically connected to the base layer and formed on the selected part of the base. An emitter layer(207) is formed on the selected part of the base layer. An emitter cap layer thin film(208) is formed on the selected part of the emitter layer. A metal resistant emitter electrode(209) is formed on the selected part of the emitter cap layer, electrically connected to the emitter cap layer. An electrode wiring is formed to connect each metal electrode to outside.