| 摘要 |
PURPOSE: A method for manufacturing a shallow trench for isolating a semiconductor device is provided to reduce processes for the semiconductor device by simultaneously forming a liner oxide film and a pad oxide film in order to improve the productivity and the reliance. CONSTITUTION: A mask pattern for forming a trench is formed on an upper portion of a silicon wafer(11). Then, the silicon wafer(11) is etched so as to form a shallow trench. An oxide film(13) is formed on an inner wall of the trench and the surface of the silicon wafer(11). A nitride film(14) is formed on thereon. Then, the trench is filled by depositing an insulation film(15) on the nitride film(14). Then, an annealing process is carried out. The insulation film(15) is patterned such that the insulation film(15) is remained in the trench area. Then, the patterned insulation film(15) is flattened by a chemical and mechanical polishing. The nitride film(14) is then removed from the silicon wafer(11).
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