| 摘要 |
PURPOSE: A method for making a semiconductor device is provided to reduce a leakage current by increasing a separation distance between junction surfaces of a silicide layer and an impurity area. CONSTITUTION: A gate oxide layer is formed on a first conductive semiconductor substrate(31) having both a normal transistor area and ESD protective transistor. The first and second gate electrodes are formed on a gate oxide layer of the ESD protective area and the normal transistor area. A first impurity area(43) in which a second impurity(44) is doped at a low density is formed on the first and second gate electrodes of the substrate. A sidewall is formed on a side surface of the first and second gate electrodes(37,38), and the second impurity area is formed by ion-implanting a second conductive impurity at a high density after using the first and second gate electrodes and the sidewall as a mask. A mask layer(45) is formed on the ESD protective transistor, and a first conductive impurity is ion-implanted at a high-density on the normal transistor area(R21) after using the mask layer as a mask. A third impurity area(48) is deeper than the first impurity area, is overlapped with the first impurity area(43), and is used as a source and drain area. A silicide layer(49) is formed on the first gate electrode and the third impurity area.
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