METHOD FOR MAKING CAPACITOR

摘要

PURPOSE: A method for making a capacitor is provided to simplify a fabrication process by forming a storage electrode of a capacitor by means of once deposition of a polysilicon. CONSTITUTION: A first insulating layer is formed to expose an impurity area on a semiconductor substrate having a transistor having the impurity area. A second insulating layer and a third insulating layer are sequentially formed on the first insulating layer. The second insulating layer has a different etching selection ratio from the first insulating layer. The third insulating layer(216) has the same etching selection ratio as the second insulating layer. The first to third insulating layers are etched to expose the impurity area, so that the second insulating layer remains between the first insulating layer and the third insulating layer. The second insulating layer and the third insulating layer are etched to form a polysilicon layer. The third insulating layer(216) is removed by using the polysilicon layer as a mask, thereby forming a storage electrode.