| 摘要 |
PURPOSE: A method of manufacturing the semiconductor device is provided to manufacture a high electron mobility transistor with two gates. CONSTITUTION: A part of the semiconductor substrate(1) is etched in the form of letter 'V'. The semiconductor layers(2,3,4,5) are successively deposited on the substrate. The predetermined parts of the semiconductor layers are MESA-etched. Pads for electrode are formed on the semiconductor layer. Two gates(10a, 10b) are simultaneously formed on the area of the substrate etched into the form of 'V' by a slope-deposition process.
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