| 摘要 |
PURPOSE: A method for manufacturing a thin film transistor is provided to manufacture a polycrystalline silicon thin film transistor and an amorphous silicon thin film transistor on a low temperature glass substrate simultaneously. CONSTITUTION: The method includes following steps. At the first step, a gate(2) is formed on only pixel region on a dielectric substrate(1). Then, the first insulator layer(3), a semiconductor layer(4) and the second insulator layer(5) are formed on exposed surface sequentially. At the third step, the semiconductor layer is patterned and an active layer(4b) wider than the gate on the pixel region while another active region(4a) is formed on one selected portion of the driver region. Then, the second insulator layer(5) is patterned on the patterned active layers to form channel stop layer(5a, 5b) narrower than the active layers. At the fifth step, n+ semiconductor layer(6) is formed on the overall surface, the result is patterned to form source/drain regions(6a-6d) on both ends of the active layer and the channel stop layers, respectively. Then, metal layer is formed on the source/drain regions, respectively and a transparent electrode is formed over the metal layer on the pixel region. At the seventh step, the third insulator layer is vaporized and a gate is formed on the upper portion of the channel stop layer on the driver region of the third insulator layer. The forth insulator layer is formed and contact hole is formed on metal layer by removing the third and forth insulator layers selectively. At last, a metal layer is formed and patterned to remove useless portion.
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