METHOD FOR MANUFACTURING METAL FUSE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a metal fuse of a semiconductor device is provided to decrease or minimize a defect of a metal fuse by completely eliminating a horn-type passivation oxidation layer. CONSTITUTION: A method for manufacturing a metal fuse of a semiconductor device comprises the steps of: forming a passivation layer(40) covering a metal layer formed on a barrier metal layer(20) to be used for a fuse, and forming a photoresist pattern exposing a part of the passivation layer; anisotropically etching a predetermined thickness of the passivation layer by using the photoresist pattern as an etch mask, and etching the exposed metal layer by a predetermined thickness; and anisotropically etching a predetermined thickness of the passivation layer again by using the etch mask, and repeatedly etching the exposed metal layer by a predetermined thickness, so that the metal layer and the passivation layer are completely etched and the barrier metal layer remains as the fuse.