PROCESS CHAMBER FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMI SPHERICAL GRAINED LAYER BY USING THE CHAMBER

摘要

PURPOSE: A process chamber and a method for manufacturing a semi spherical grained layer by using the chamber are provided to prevent particles and impurities by adopting a pressure equilibrium device. CONSTITUTION: A process chamber comprises a growth chamber(300) in which a semiconductor substrate(100) is installed. A heater chamber(400) provided with a heater(430) is disposed below the growth chamber(300) so as to heat the semiconductor substrate(100). A first pump portion(500) is connected to the growth chamber(300) so as to create a first chamber pressure in the growth chamber(300). A second pump portion(600) is connected to the heater chamber(400) so as to create a second chamber pressure in the heater chamber(400). A pressure equilibrium device is provided to compensate for the pressure difference between the heater chamber(400) and the growth chamber(300) such that the pressure between them is equilibrium state.