| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent high concentrated impurity ion forming a source/drain from being injected into a field oxide layer in order to reduce leakage current and to improve insulation property. CONSTITUTION: The method includes following steps. At first field ions are injected into an isolated region of a semiconductor substrate(21). At the second step, a field oxide layer(26) is formed on the insulated region and a gate electrode is formed on an active region. At the third step, an insulator layer is formed on the front face and a photosensitive layer is formed. Then, the photosensitive layer is patterned to leave with bigger width on the field oxide layer, the insulator layer is etched back to form a sidewall on the sides of the gate. At the fifth step, a high concentration impurity region is formed with a predetermined spacing from the field ion injection region and a channel region below the gate electrode. At last, low concentration impurities are injected into both substrates of the gate electrode including the region where no high concentration impurities are injected.
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