| 摘要 |
PURPOSE: A method of manufacturing a capacitor electrode of semiconductor device is provided to increase the capacitance of the capacitor by forming a double sided cylinder type electrode using a hemispherical polysilicon, thus suiting for high intergration. CONSTITUTION: An active area and an isolated area are formed on the semiconductor substrate. Circuitry element like a transistor is formed on the active area. First oxidation layer and nitride layer(12) are successively formed thereon. The predetermined part of the first oxidation layer and nitride layer is etched to form a contact hole. On the surface, the first polysilicon(13), the second oxidation layer(14), the hemispherical multi-crystalline polysilicon(15), the photoresist are successively deposited. The photoresist defines the area to have a capacitor electrode by photolithography process. The hemispherical polysilicon(15), the second oxidation layer(14) and the first polysilicon(13) are successively etched. The second oxidation layer(14) is wet-etched to reduce to a predetermined width and the photoresist is removed. On the surface, the second polysilicon(17) is deposited in the predetermined thinkness. The second polysilicon is anisotropically etched to form a polycide wall on both sidewalls of the second oxidation layer and the first polysilicon(13), also forming the groove on the sidewall. The second oxidation layer(14) is etched to have the double-sided cylinder structure.
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