A SINGLE TRANSISTOR TYPE FERROELECTRIC RANDOM ACCESS MEMORY AND AN OPERATING METHOD THEREOF

摘要

PURPOSE: A single transistor ferroelectric random access memory having common word line and method for operating the same are provided to make an ideal common word line by interconnecting a gate and a source of a single transistor through a word line in each memory cell. CONSTITUTION: A ferroelectric random access memory includes a single transistor and a ferroelectric capacitor in each memory cell of a substrate. An upper electrode(103) of the ferroelectric capacitor is arranged on a channel of the single transistor in order to be functioned as a gate of the single transistor. The upper electrode is connected to a source of the single transistor thereby making a common word line(102). A bit line(101) is formed by connecting a drain of the single transistor to the upper electrode. A plate line corresponds to the bit line.