SEMICONDUCTOR DEVICE USING AIR GAP AS INTERLAYER DIELECTRIC AND METHOD THEREOF

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to mitigate deterioration of the semiconductor device caused by a resistor-capacitor delay by forming an interlayer dielectric with an air gap, and to prevent the air gap from going down partially by converting an interlayer dielectric to an air gap after a chemical mechanical polishing process. CONSTITUTION: A method for manufacturing a semiconductor device comprises the steps of: sequentially forming an air gap precursor layer(34) and an air gap protection layer composed of organic polymer on a semiconductor substrate(30) having a conductive layer(32); patterning the air gap protection layer to form an opening exposing the air gap precursor layer, and forming an etching stop layer pattern(44) composed of the air gap protection layer; forming an insulating layer pattern having a damascene interconnection region exposing the opening to an upper portion of the etching stop layer pattern; etching the air gap precursor layer by using the etching stop layer pattern as a mask to form the opening exposing the conductive layer; filling the damascene interconnection region and opening with a conductive material(50); planarizing the conductive material by having an upper surface of the insulating layer pattern as a planarization end point, to form a dual damascene interconnection contacting the conductive layer; and converting the air gap precursor layer to an air gap.