发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
An improved semiconductor device which prevents a short circuit between a wiring layer and a semiconductor substrate, caused by the penetration of a contact hole, will be provided. A lower conducting layer is formed on a second interlayer insulating film. A third interlayer insulating film covers lower conducting layer. A contact hole is formed in third interlayer insulating film in order to connect an upper conducting layer and lower conducting layer. A stopper layer of silicide or metal is formed below contact hole between the surface of a semiconductor substrate and lower conducting layer. |
申请公布号 |
KR100268629(B1) |
申请公布日期 |
2000.10.16 |
申请号 |
KR19980015909 |
申请日期 |
1998.05.04 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MAMETANI, TOMOHARU;NAGAI, YUKIHIRO |
分类号 |
H01L21/768;H01L23/522;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|