| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to simplify the whole fabrication process and to remove a step between a cell part and a peripheral circuit part, and thus to smooth processes thereafter. CONSTITUTION: After defining an active region and a field region by activating a field oxide(32) on a region of a semiconductor substrate(31), a gate insulation film(33) and a polysilicon layer(34) are formed on the semiconductor substrate. Then, after depositing the first photo resist(35) on the polysilicon layer, the photo resist is patterned through an exposure and a developing process. A gate electrode(34a) is formed by removing the polysilicon layer and the gate insulation film selectively using the first photo resist as a mask. And, a trench(36) is formed on the semiconductor substrate on both sides of the gate electrode. A metal layer(37) like Ti, Ni, Co and W with an RTP(Rapid Thermal Process) on the semiconductor substrate including the trench, after removing the first photo resist. And, a silicide (37a) is formed on a surface of the semiconductor substrate and the gate electrode by removing the metal layer by performing a wet etching process on the semiconductor substrate. The first HLD(High temperature Low pressure Deposition) film(38) is formed and the first conductive layer(39) is formed on the first HLD film. Then, a dielectric film(40) is formed on the first conductive layer, and the second conductive layer(41) is formed on the dielectric film. And, the second photo resist(42) is deposited on the second conductive film, and is patterned. A capacitor(43) is formed by removing the second conductive layer and the dielectric film and the first conductive layer selectively in order for a surface of the first HLD film to be revealed. And, the second photo resist is removed, and the second HLD film(44) and a BPSG layer(45) are formed on the whole surface of the semiconductor substrate.
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