发明名称 |
CAPACITOR OF SEMICONDUCTOR AND METHOD FOR MAKING THE SAME |
摘要 |
PURPOSE: A capacitor of a semiconductor and a method for making the same are provided to make a high-integration degree by increasing a charging capacitance of a capacitor and a reliability of a device. CONSTITUTION: A plug(23) is connected to either a source or a drain formed on a semiconductor substrate(21). A lower electrode is connected to the plug, a lower end surface is widely patterned as compared to the plug. A high dielectric layer(29) encloses the lower electrode of the capacitor. A capacitor upper electrode(30) is formed on the high dielectric layer(29), and encloses the lower electrode of the capacitor. Both surfaces of the capacitor lower electrode have a predetermined slope. Thereby, a charging capacitance of a capacitor and a reliability of a device are increased.
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申请公布号 |
KR100268911(B1) |
申请公布日期 |
2000.10.16 |
申请号 |
KR19970067895 |
申请日期 |
1997.12.11 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO., LTD. |
发明人 |
JEON, YEONG GWEON |
分类号 |
H01L27/06;(IPC1-7):H01L27/06 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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