发明名称 CAPACITOR OF SEMICONDUCTOR AND METHOD FOR MAKING THE SAME
摘要 PURPOSE: A capacitor of a semiconductor and a method for making the same are provided to make a high-integration degree by increasing a charging capacitance of a capacitor and a reliability of a device. CONSTITUTION: A plug(23) is connected to either a source or a drain formed on a semiconductor substrate(21). A lower electrode is connected to the plug, a lower end surface is widely patterned as compared to the plug. A high dielectric layer(29) encloses the lower electrode of the capacitor. A capacitor upper electrode(30) is formed on the high dielectric layer(29), and encloses the lower electrode of the capacitor. Both surfaces of the capacitor lower electrode have a predetermined slope. Thereby, a charging capacitance of a capacitor and a reliability of a device are increased.
申请公布号 KR100268911(B1) 申请公布日期 2000.10.16
申请号 KR19970067895 申请日期 1997.12.11
申请人 HYUNDAI MICRO ELECTRONICS CO., LTD. 发明人 JEON, YEONG GWEON
分类号 H01L27/06;(IPC1-7):H01L27/06 主分类号 H01L27/06
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