Method of making an AMLCD where the etch stopper is formed without first preparing a pattern mask

摘要

An active matrix liquid crystal display (AMLCD) with a high aperture ratio and with an etch stopper formed by a back exposure method, and not with an additional pattern mask. The AMLCD has a gate line that extends in a first direction on the substrate and has a first region that corresponds to the gate electrode region. The gate line also has a second region corresponding to a non-gate electrode region and a contact hole adjacent to the first region and the second region. A thin film transistor (TFT) of the AMLCD is formed with a nonlinear channel region.