| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a transparent electrically conductive film capable of obtaining a transparent electrically conductive film reduced in both specific resistance and film compressive stress and to provide a transparent electrically conductive film formed by this method. SOLUTION: As to a method for forming a transparent electrically conductive film, a plasma beam generated from a discharge plasma generating means composing a cathode is introduced into an anode, by which an evaporating material stored in the anode is evaporated and ionized, and the ionized vapor depositing material particles are deposited on the surface of a substrate to form a transparent electrically conductive film on the surface. In this method, the temp. of the substrate is controlled to <=130 deg.C to form the transparent electrically conductive film on the surface of the substrate, and, after that, the formed transparent electrically conductive film is subjected to heat treatment at >=180 deg.C. The transparent electrically conductive film formed by this transparent electrically conductive film forming method has <=230μΩ.cm specific resistance and <=0.35 GPa film compressive stress.
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