Polycrystalline module and method for producing a semiconductor module

摘要

The present invention pertains to the field of microelectronics and can be used in the production of various semiconductor micro-circuits. This polycrystalline module includes a plurality of semiconductor crystals having their contact pads arranged at the same level while the gap between the crystals is filled with a non-shrinking structural binder that do not extend over the front surface, wherein said surface forms a monolithic module with a planar and a mosaic-like structure. The thickness of the structure represents from 1.0 to 1.5 times that of the semiconductor crystals. The inter-crystal switching members within the module are arranged on one or more parallel planes above the front surface of the semiconductor crystals. The method for producing the same involves submerging one or more semiconductor crystals arranged on a vacuum holding support into a melt of an eutectic composition applied on a heated substrate, then cooling down the crystallising monolith and forming the switches. The eutectic composition is melted down in an inert gas atmosphere and heated at a temperature that exceeds by 10 to 30 DEG C the eutectic point, while the semiconductor crystals are heated at a temperature which is 10 to 20 DEG C lower than the eutectic point. Before submerging the semiconductor crystals, an enclosed volume is created above the eutectic composition melt by providing on the vacuum holding support or on the substrate an additional frame having a thickness that represents from 1.2 to 1.5 times that of a semiconductor crystal. The inert gas is further removed and the crystallising monolith is cooled down at a rate of 10 to 30 DEG C per minute.