发明名称 METHOD AND DEVICE FOR MAGNETRON SPUTTERING
摘要 PROBLEM TO BE SOLVED: To securely obtain uniform film quality by executing sputtering in such a manner that the whole face of a substrate is applied with a vertical magnetic field. SOLUTION: By applying the whole face of a substrate 2 with a magnetic field vertical to the substrate face, the place in which the components vertical to the substrate face is made zero in the magnetic field is eliminated. Namely, by executing sputtering in such a manner that the substrate 2 is deviated from the position in which the magnetic field horizontal to the substrate face is formed, the converged region of the magnetic line of force is not formed, and the formation of a uniform film is made possible over the whole face of the substrate 2. Thus, in accordance with the magnetic force generated by a cathode, a coil or the other permanent magnet M and an electromagnet composing the sputtering device, the arranging position of the substrate 2 in the device is set to the one deviated from the position in which the magnetic field horizontal to the substrate face is formed. As to the preferable concrete measure, the number of magnetic poles is increased from two to three, moreover, their magnetic force is controlled and also, the substrate 2 is arranged to a suitable position.
申请公布号 JP2000282235(A) 申请公布日期 2000.10.10
申请号 JP19990089388 申请日期 1999.03.30
申请人 KOBE STEEL LTD 发明人 MIYAMOTO TAKASHI;IWAMURA EIJI;HOSOKAWA YOSHIYUKI;KINOSHITA TAKASHI
分类号 H01B13/00;C23C14/35;(IPC1-7):C23C14/35 主分类号 H01B13/00
代理机构 代理人
主权项
地址