MANUFACTURE OF CRYSTAL MATERIAL AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To enable crystal material to recover completely from damage caused by ion implantation. SOLUTION: Al ions are implanted into an N-type 6H-SiC, the N-type 6H-SiC is irradiated with a single pulse or a few pulses of a KrF laser beam which is 248 nm in wavelength and oscillates for one psec or below, by which N-type 6H-SiC recovers from damage caused by implantation of ions without melting SiC crystals. Irradiation energy density of a laser beam per single pulse amounts to 0.2 to 1.5 J/cm2.