| 摘要 |
PROBLEM TO BE SOLVED: To easily provide a method for forming a current constriction layer in a semiconductor device in a simple process, and a current bottleneck type surface emitting laser with the current constriction layer obtained by this method. SOLUTION: A surface emitting laser device includes a clad layer 3 composed of an n-type clad layer 6, an active layer 7, a p-type clad layer 8, a planar tunnel junction 9, and an n-type clad layer 10 formed sequentially on a first reflecting mirror 1 and a first electrode 2. A second reflecting mirror 4 and a second electrode 5 are formed on the clad layer 3. The second electrode 5 is diffused through heat treatment into the inside of the adjoining n-type clad layer 10. In this step, a current constriction layer 11, in which a tunnel effect is extinguished, is formed at a position in the tunnel junction 9 corresponding to the second electrode 5.
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