| 摘要 |
<p>PROBLEM TO BE SOLVED: To inhibit the crystal growth of a compound semiconductor on an insulating film and the top of each wall surface of an opening by assisting the crystal growth of the compound semiconductor on the (001) face relative to crystal growth on the (110) face during the process of forming the end face of a laser mesa portion including a laser oscillation area and a light modulator area, and an isolation trench. SOLUTION: In this method for manufacturing a composite optical device, a mesa structure portion which includes a laser oscillation area including an active layer 3, a second clad layer 4, an optical guide layer 5 and a third clad layer 6 which are formed on the (001) face of a compound semiconductor substrate via a first clad layer 2, and a light modulator area including an optical- waveguide or light-absorbing layer 10 and a second clad layer 4 on the first clad layer 2, is designed to join one end face of the active layer 3 with one end face of the optical-waveguide or light-absorbing layer 10. The end face of the light modulator area opposite to the end face joined with the laser oscillation area is formed at an angle of approximately 45 deg. with the direction [1/10] perpendicular to the direction [110].</p> |
