| 摘要 |
PROBLEM TO BE SOLVED: To reduce the average amount of distortion in an active layer by providing the luminous active layer located at the upper part of a gallium arsenide compound semiconductor substrate with quantum well structure, forming the quantum well structure so that it forms a pair of barrier layers and a well layer, and forming the well layer out of GaInAs containing a specific amount or less of nitrogen. SOLUTION: A buffer layer 3 is grown on a gallium arsenide compound semiconductor substrate 2 and subsequently a lower clad layer 4 of n-type gallium indium phosphorus is formed. Then a luminous active layer is grown thereon. The luminous active layer is obtained by, while feeding AsH3 and PH3, feeding trimethylgallium and trimethylindium to grow a barrier layer 10 of GaAsP, and thereafter, while feeding dimethylhydrazine and AsH3, feeding Ga and In to form a GaInNAs well layer 9 with a nitrogen content of 3% or less. Subsequently, a GaAsP barrier layer 10 is grown. These steps are repeated four times to form quantum well structure.
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