SILICON WAFER HEAT-TREATING METHOD

摘要

PROBLEM TO BE SOLVED: To obtain a silicon wafer of a constitution wherein even though the silicon wafer is subjected to a conventional OSF actualizing heat treatment, an OSP is free and a COP is free within the wafer and a contamination of Fe or the like on the wafer and a slip of the wafer are hardly caused. SOLUTION: This heat-treating method is a silicon wafer heat-treating method wherein a heat treatment is performed on a silicon wafer being generated both a COP and a dislocation pit within its surface for two to five hours at a temperature of 1000 deg.C±30 deg.C under an oxygen atmosphere and successively when the wafer is heat-treated for one to sixteen hours at a temperature of 1130 deg.C±30 deg.C, an OSF is actualized in the center part of the wafer. The silicon wafer is heat- treated for one minute to 6 hours at a temperature of 1130 to 1200 deg.C under an atmosphere of 100% of oxygen of under an atmosphere mixed oxygen with nitrogen.