| 摘要 |
PROBLEM TO BE SOLVED: To enhance the EM resistance of a damascene wiring. SOLUTION: A wiring groove having a plurality of split islands 6 arrangement-formed at prescribed intervals on its bottom is formed, then an Al film, which is used as a DD wiring 8, is deposited in the wiring groove 4 in such a way as to fill the interior of the wiring groove 4, then the grain diameter of crystal grains 9 in the Al film is formed into a large grain diameter by an RTA and lastly, the surplus Al film on the outside of the groove 4 is removed to complete the DD wiring 8.
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