| 摘要 |
PROBLEM TO BE SOLVED: To provide a growth method for a nitride semiconductor wherein such nitride semiconductor substrate is provided as, when a device structure is formed with a nitride semiconductor as a substrate, no chipping or cracking occurs with the substrate even if a resonance surface is formed by beveling, for better life characteristics while dislocation is so reduced as to improve reliability of an element at actual use, and to provide a nitride semiconductor element which is excellent in such element characteristics as life characteristics with the one provided by that growth method for nitride the semiconductor as a substrate. SOLUTION: A first nitride semiconductor 2 is grown on a nitride semiconductor substrate 1 by such method as dislocation is reduced by using the lateral growth of a nitride semiconductor (method for forming a first protective film 11 or first rough 13). A device structure is formed to grow a nitride semiconductor element on the first nitride semiconductor 2 thus provided. |
