| 摘要 |
PROBLEM TO BE SOLVED: To increase yields and simplify the manufacturing process to increase the manufacturing volume by forming a nitride semiconductor layer doped with the p-type impurity on a buffer layer which is made of a nitride semiconductor and contains polycrystals, and which is formed on a substrate made of the material different from a nitride semiconductor. SOLUTION: A nitride semiconductor substrate comprises a base layer 2 formed on a substrate 1 made of the material different from a nitride semiconductor, and a first nitride semiconductor layer 3 doped with the p-type impurity formed on the base layer 2. The base layer 2 is a buffer layer made of a nitride semiconductor and containing polycrystals, First of all, a sapphire substrate 1 is cleaned in a hydrogen atmosphere, and then a GaN low temperature growth buffer layer 2 is grown as a base layer on the substrate 1, Next, a first nitride semiconductor layer 3 made from a GaN layer doped with Mg is grown, Thereafter, undoped GaN (a second nitride semiconductor) 4 is grown. |
