| 摘要 |
PROBLEM TO BE SOLVED: To select a single crystal thin film having a sphalerite type structure with good reproducibility from among chalcogenide II-VI compound semiconductor single crystal thin film containing an MgTe having a plurality of crystal structures or magnesium(Mg), such as the MgTe, to grow an MBE. SOLUTION: A molecular beam epitaxial growth method comprises at least a step of forming a ZnTe buffer layer 33 on a ZnTe substrate 3 in a vacuum- exhausted growth chamber, a step of heating the substrate 3 on this buffer layer 33 at a growth temperature in the temperature range of 280 to 340 deg.C, and a step wherein the molecular beam strength ratio of a group VI element to a group II element is adjusted so that the ratio is set within the extent of a ratio of 15 to 45 to make the molecular beam of a prescribed constituent element irradiate the surface of the substrate 3 at this growth temperature. An Mg chalcogenide group II-VI compound semiconductor single crystal thin film is deposited on the substrate.
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