| 摘要 |
PROBLEM TO BE SOLVED: To provide a linear or area image sensor integrated circuit device having high resolution. SOLUTION: In a semiconductor integrated circuit device using an SOI substrate 101, an SOI region is selectively formed, and a signal processing circuit is formed in the SOI region. A photodiode 105 is formed in a bulk region, and the photodiode 105 is constituted as a trench structure, in which the sidewalls and bottom part are provided with diffused layers, and the inside part is constituted of an insulating film or the insulating film and polycrystalline silicon to which potential is applied so that a photodiode structure in which a sell size is small, and yet with a sufficiently high S/N ratio can be obtained.
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