| 摘要 |
PROBLEM TO BE SOLVED: To reduce the amount of etching by steam and to prevent a reduction and nonuniformity in film thickness, by arranging a removing agent other than a substrate to be processed for removing moisture and/or oxygen contained by atmospheric gas between the substrate and a gas introduction port for introducing the gas into a processing chamber. SOLUTION: A substrate (wafer) 2 to be processed, a boat holding the substrate 2, and a heat barrier 4 supporting the boat 3 are arranged in a furnace center pipe 1, and an introduction pipe 8 formed of quartz is arranged in an introduction port 7 introducing atmospheric gas containing hydrogen. An agent 13 removing moisture and/or oxygen is arranged on the top plate of the boat 3. Since the agent 13 can remove moisture and/or oxygen contained by the gas introduced into the furnace, the amount of etching by the moisture of the substrate 2, and in particular, a reduction and variation in film thickness in the case where the substrate 2 is an SOI substrate, can be reduced.
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